| 摘要 |
An apparatus for providing an electrical fuse is provided. An electrical fuse is patterned from the active layer of a semiconductor-on-insulator (SOI) wafer. One shape of the electrical fuse may be a first and second portion electrically coupled via a third section. The third section is typically thinner than the first and second portion. An ion implant is performed to fully deplete the electrical fuse, and a silicidation process is performed. Thereafter, standard processing techniques may be used to form vias and other integrated circuit structures.
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