| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoresist topcoat extremely suitable for photolithography and a liquid immersion photolithographic system. <P>SOLUTION: The topcoat consists of a composition including functionalized polyhedral oligomeric silsesquioxane derivatives of formulae T<SB>m</SB><SP>R3</SP>, wherein m is equal to 8, 10 or 12 and Q<SB>n</SB>M<SB>n</SB><SP>R1, R2, R3</SP>, (wherein n is equal to 8, 10, 12). The functional groups preferably include aqueous base soluble moieties. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
