发明名称 |
MRAM cell structure and method of fabrication |
摘要 |
An MRAM structure is disclosed where the distance from a bit line or word line to an underlying free layer in an MTJ is small and well controlled. As a result, the bit line or word line switching current is reduced and tightly distributed for better device performance. A key feature in the method of forming the MRAM cell structure is a two step planarization of an insulation layer deposited on the MTJ array. A CMP step flattens the insulation layer at a distance about 60 to 200 Angstroms above the cap layer in the MTJ. Then an etch back step thins the insulation layer to a level about 50 to 190 Angstroms below the top of the cap layer. Less than 5 Angstroms of the cap layer is removed. The distance variation from the free layer to an overlying bit line or word line is within +/-5 Angstroms.
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申请公布号 |
US2006209591(A1) |
申请公布日期 |
2006.09.21 |
申请号 |
US20060418910 |
申请日期 |
2006.05.05 |
申请人 |
APPLIED SPINTRONICS, INC. |
发明人 |
HONG LIUBO;ZHONG TOM;YANG LIN |
分类号 |
G11C11/15;G11C11/16;H01L21/00;H01L27/22;H01L43/12 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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