Fabrication method for flash memory used in digital camera, involves forming electrode spacer on side walls of floating gate formed between element isolation film

摘要

The method involves forming pad insulating and hard mask film (21,22) on substrate (20). The substrate and films are selectively removed to form trenches. An element isolating film (23) is formed with in the trenches. The mask and insulating film are removed and floating gate (25) is formed between isolation film. The isolation film is removed to preset thickness. An electrode spacer (27) is formed on side walls of the floating gate. A control gate (29) with interlayer dielectric film (28) is formed.