| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin, high-breakdown-voltage, solid-state imaging element which is stable and reliable even if the element, especially the width of an electrode is miniaturized, and can facilitate its manufacturing and has high reliability. SOLUTION: A solid-state imaging element comprises a photoelectric converter formed on a semiconductor substrate and a charge transfer part for transferring electric charge generated by the photoelectric converter. A charge transfer electrode in the charge transfer part has a laminated layer structure; a first layer electrode made of a first layer conductive film, and a second layer electrode made of a second layer conductive film formed on the upper layer of the first layer electrode. A first gate oxide film formed under the first layer electrode has a stacked layer structure including a bottom oxide film made of an silicon oxide film formed on the semiconductor substrate, a silicon nitride film formed on the bottom oxide film, and a top oxide film made of a silicon oxide film formed on the silicon nitride film. A second gate oxide film formed under the second layer electrode is made of a silicon oxide film. COPYRIGHT: (C)2006,JPO&NCIPI
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