| 摘要 |
PROBLEM TO BE SOLVED: To provide a means for polishing a crystal wafer, obtaining desired polishing characteristic in applying polishing work functioning as chemical polishing to the crystal wafer. SOLUTION: After the crystal wafer 7 is dipped in a container 11 filled with an acid solution 8, the container 11 is installed in an ultrasonic tank 12. Cerium oxide solution is used as the acid solution 8, the crystal wafer 7 dipped in the acid solution 8 is irradiated with ultrasonic waves to accelerate the chemical action, whereby the surface of the crystal wafer 7 is subjected to chemical polishing. Further after the end of chemical polishing, the crystal wafer 7 is cleaned with pure water to finish polishing work. COPYRIGHT: (C)2006,JPO&NCIPI
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