发明名称 |
Semiconductor memory device and method for initializing the same |
摘要 |
A semiconductor memory device includes memory cell blocks ( 11 ) through ( 14 ) including a nonvolatile memory cell. The memory cell blocks ( 11 ) through ( 14 ) include chip-data storing regions ( 11 b) through ( 14 b) for storing chip data containing operation parameters of the semiconductor memory device and pass-flag storing regions (11c) through ( 14 c) for storing pass flags which correspond to the respective chip-data storing regions and show the validity of the stored chip data. The chip-data storing regions store the same chip data.
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申请公布号 |
US7110314(B2) |
申请公布日期 |
2006.09.19 |
申请号 |
US20040515433 |
申请日期 |
2004.11.23 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
MURAKUKI YASUO;HIRANO HIROSHIGE |
分类号 |
G11C5/14;G11C11/22;G11C7/10;G11C7/20;G11C29/04 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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