发明名称 Semiconductor memory device and method for initializing the same
摘要 A semiconductor memory device includes memory cell blocks ( 11 ) through ( 14 ) including a nonvolatile memory cell. The memory cell blocks ( 11 ) through ( 14 ) include chip-data storing regions ( 11 b) through ( 14 b) for storing chip data containing operation parameters of the semiconductor memory device and pass-flag storing regions (11c) through ( 14 c) for storing pass flags which correspond to the respective chip-data storing regions and show the validity of the stored chip data. The chip-data storing regions store the same chip data.
申请公布号 US7110314(B2) 申请公布日期 2006.09.19
申请号 US20040515433 申请日期 2004.11.23
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 MURAKUKI YASUO;HIRANO HIROSHIGE
分类号 G11C5/14;G11C11/22;G11C7/10;G11C7/20;G11C29/04 主分类号 G11C5/14
代理机构 代理人
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