CRYSTAL GROWING METHOD, CRYSTAL GROWING APPARATUS, BEAM SPLITTER, AND DISPLAY

摘要

A method for growing a crystal through high-speed crystallization. The method comprises the steps of forming m-th and (m+1)-th k-th crystallized regions (202a, 202b) in an amorphous silicon film (201) by applying m-th and (m+1)-th band-like beams (m is an integer of 1 or more) to a thin film and forming m-th (k+1)-th crystallized region (203) continuous with the (m+1)-th k-th crystallized region (202b) in the amorphous silicon film (201) by applying the m-th band-like beam to a region that is spaced away from the m-th k-th crystallized region (202a) by a distance r (r is longer than the length of one crystal growth and that overlaps with the (m+1)-th k-th crystallized region (202b).