发明名称 |
Semiconductor device with resistor pattern and method of fabricating the same |
摘要 |
Disclosed is a semiconductor device with a resistor pattern and methods of fabricating the same. Embodiments of the present invention provide a method of fabricating a resistor pattern having high sheet resistance by using a polycide layer for a gate electrode in a semiconductor device with the resistor pattern. Embodiments of the invention also provide a semiconductor device with a resistor pattern that is formed narrower than the minimum line width that can be defined in a photolithographic process so that sheet resistance thereof increases, and a method of fabricating the same.
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申请公布号 |
US7109566(B2) |
申请公布日期 |
2006.09.19 |
申请号 |
US20030675336 |
申请日期 |
2003.09.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIN YOO-CHEOL |
分类号 |
H01L27/02;H01L29/00;H01L21/8246;H01L21/8247;H01L27/06;H01L27/108;H01L27/115 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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