| 发明名称 |
Method for growing oxide thin films containing barium and strontium |
| 摘要 |
The present invention relates to a method for growing oxide thin films which contain barium and/or strontium. According to the method, such thin films are made by the ALE technique by using as precursors for barium and strontium their cyclopentadienyl compounds. A thin film made by means of the invention has a high permittivity and excellent conformality.
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| 申请公布号 |
US7108747(B1) |
申请公布日期 |
2006.09.19 |
| 申请号 |
US20010787062 |
申请日期 |
2001.06.28 |
| 申请人 |
ASM INTERNATIONAL N.V. |
发明人 |
LESKELAE MARKKU;RITALA MIKKO;HATANPAEAE TIMO;HAENNINEN TIMO;VEHKAMAEKI MARKO |
| 分类号 |
C01G23/00;C30B25/02;C23C16/40;H01L21/316;H01L21/8242;H01L21/8246;H01L27/105;H01L27/108;H01L39/24 |
主分类号 |
C01G23/00 |
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