发明名称 Bi12TiO20 SINTERED COMPACT AND PHOTOCONDUCTIVE LAYER
摘要 <P>PROBLEM TO BE SOLVED: To provide a Bi<SB>12</SB>TiO<SB>20</SB>sintered compact capable of realizing high sensitivity as a photoconductive layer constituting a radiation image pickup panel for recording radiation image information as electrostatic latent images. <P>SOLUTION: In the Bi<SB>12</SB>TiO<SB>20</SB>sintered compact, Bi<SB>12</SB>TiO<SB>20</SB>powder is sintered at &ge;700&deg;C and <800&deg;C or the different phase of a Bi<SB>12</SB>TiO<SB>20</SB>sintered compact surface is removed so that the strength ratio of the strongest peak of an X-ray diffraction pattern by the different phase other than a Bi<SB>12</SB>TiO<SB>20</SB>phase to the strongest peak of the X-ray diffraction pattern by the Bi<SB>12</SB>TiO<SB>20</SB>phase becomes &le;1/100. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006245463(A) 申请公布日期 2006.09.14
申请号 JP20050062036 申请日期 2005.03.07
申请人 FUJI PHOTO FILM CO LTD 发明人 KAKIUCHI RYOZO
分类号 H01L31/09;C04B35/46;G01T1/24;H01L27/14;H01L27/146 主分类号 H01L31/09
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