发明名称 |
SILICON NANO-WIRE, SEMICONDUCTOR ELEMENT INCLUDING SILICON NANO-WIRE, AND METHOD FOR MANUFACTURING SILICON NANO-WIRE |
摘要 |
PROBLEM TO BE SOLVED: To provide a silicon nano-wire, a semiconductor element including the silicon nano-wire, and a method for manufacturing the silicon nano-wire. SOLUTION: The method for manufacturing the silicon nano-wire includes (a) a step for forming fine grooves including a plurality of micro-cavity patterns regularly formed on the surface of a silicon substrate; (b) a step for forming a metallic layer by applying a substance for performing the catalytic action for forming the nano-wire on the substrate; (c) a step for forming a catalyst by coagulating metallic layers in the fine grooves existing on the surface of the substrate by heating the metallic layers; and (d) a step for growing the nano-wires in the region between the catalyst and the substrate. COPYRIGHT: (C)2006,JPO&NCIPI
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申请公布号 |
JP2006239857(A) |
申请公布日期 |
2006.09.14 |
申请号 |
JP20060048796 |
申请日期 |
2006.02.24 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
CHOI BYOUNG-IYONG;PARK WON-JUN;LEE EUN-KYUNG;GEN ZAIYU |
分类号 |
B82B3/00;B82B1/00;C01B33/02 |
主分类号 |
B82B3/00 |
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