| 摘要 |
A nitride semiconductor light emitting device includes: an active layer formed of a first III-V nitride semiconductor, the active layer having opposite surfaces which face each other; an alloy crystal layer formed of In<SUB>x</SUB>Al<SUB>y</SUB>Ga<SUB>1-x-y</SUB>N (0<x<1, 0<y<1, 0<x+y<1) on one of the opposite surfaces of the active layer, the alloy crystal layer having n-type conductivity; and an ohmic electrode formed to be in contact with the alloy crystal layer. A transparent electrode is provided on the other surface of the active layer. A p-side electrode is provided on a portion of the transparent electrode.
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