发明名称 |
Method to modulate etch rate in SLAM |
摘要 |
Several techniques are described for modulating the etch rate of a sacrificial light absorbing material (SLAM) by altering its composition so that it matches the etch rate of a surrounding dielectric. This particularly useful in a dual damascene process where the SLAM fills a via opening and is etched along with a surrounding dielectric material to form trenches overlying the via opening.
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申请公布号 |
US2006205221(A1) |
申请公布日期 |
2006.09.14 |
申请号 |
US20060417615 |
申请日期 |
2006.05.03 |
申请人 |
GOODNER MICHAEL D;MEAGLEY ROBERT P;O'BRIEN KEVIN P |
发明人 |
GOODNER MICHAEL D.;MEAGLEY ROBERT P.;O'BRIEN KEVIN P. |
分类号 |
H01L21/465;H01L21/311;H01L21/768 |
主分类号 |
H01L21/465 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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