发明名称 METHOD OF PLASMA PROCESSING
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which enhances the throughput. SOLUTION: In the plasma processing apparatus, a sample placed on a stand displaced inside a processing chamber is processed, by using a plasma formed in the processing chamber. The stand is provided above the plasma processing apparatus with a first member, coming into contact with the sample thereon and a second member disposed below the first member. The plasma processing apparatus comprises a temperature-adjusting means, disposed inside the stand for adjusting the first and second temperature on the outer peripheral side and central side of this stand, respectively, and a pressure-adjusting means, disposed in between a surface of the stand and the sample coming into contact with the surface, for adjusting the first and second pressure on an outer peripheral side and inner peripheral side of the sample, respectively. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006245621(A) 申请公布日期 2006.09.14
申请号 JP20060168579 申请日期 2006.06.19
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 SUMIYA MASANORI;KIKKAI MOTOHIKO;UDO RYUJIRO;ARAI MASATSUGU
分类号 H01L21/3065 主分类号 H01L21/3065
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