| 摘要 |
PROBLEM TO BE SOLVED: To provide a dual damascene process by which a micro wiring structure can be formed. SOLUTION: A first film 24 to be etched is formed on an insulating layer 33 formed on a semiconductor substrate, and a first mask film 26 and a second film 28 to be etched are formed thereon. A second mask film 30 is formed on the second film 28, and a wiring pattern 32 is formed in the second mask film, and then, while the second mask film is being used as a mask, the second film 28 is etched to form a pattern 32 wherein the first mask film is exposed on the bottom. While the first mask film is being used as a mask, the first film 24 is etched to form a via pattern 33 in the first film 24. The wiring pattern and the via pattern are used to selectively etch the insulating layer 23 and form a via hole in the insulating layer as well as a wiring groove in the upper part of the via hole. COPYRIGHT: (C)2006,JPO&NCIPI
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