| 摘要 |
PROBLEM TO BE SOLVED: To improve amount of substrate noise absorbed by a guard ring and prevent erroneous operation due to substrate noise in a semiconductor device comprising an SOI substrate provided with the guard ring. SOLUTION: The semiconductor device comprises the SOI substrate on which a supporting substrate 10, an insulating layer 11, and an SOI layer 12 are sequentially laminated, an element region 4 provided to a region of the SOI substrate, and a guard ring region 8 provided to the circumference of the element region 4 of the SOI substrate. Moreover, in this semiconductor device, a first diffusing layer 15 provided in the SOI layer 12 of the element region 4, and a second diffusing layer 26 provided in the SOI layer 12 of the guard ring region 8, are electrically connected. COPYRIGHT: (C)2006,JPO&NCIPI
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