发明名称 |
Fin field effect transistors having capping insulation layers |
摘要 |
A field effect transistor includes a vertical fin-shaped semiconductor active region having an upper surface and a pair of opposing sidewalls on a substrate, and an insulated gate electrode on the upper surface and opposing sidewalls of the fin-shaped active region. The insulated gate electrode includes a capping gate insulation layer having a thickness sufficient to preclude formation of an inversion-layer channel along the upper surface of the fin-shaped active region when the transistor is disposed in a forward on-state mode of operation. Related fabrication methods are also discussed.
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申请公布号 |
US2006202270(A1) |
申请公布日期 |
2006.09.14 |
申请号 |
US20060433942 |
申请日期 |
2006.05.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SON YONG-HOON;CHOI SI-YOUNG;LEE BYEONG-CHAN;LEE DEOK-HYUNG;JUNG IN-SOO |
分类号 |
H01L27/12;H01L21/336;H01L27/01;H01L29/786;H01L31/0392 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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