| 摘要 |
PROBLEM TO BE SOLVED: To avoid lowering of an etching rate due to crystallization of a high dielectric film. SOLUTION: At first, a foundation substrate 11 is prepared, and a high dielectric amorphous film 50 of a high dielectric material is formed on the foundation substrate. An amorphous silicon film 60 is formed on the high dielectric amorphous film at a film formation temperature of an amorphous-processing temperature of the high dielectric material. Thereafter, a gate electrode formation film 62 is formed by processing the amorphous silicon film by a photolithography method and dry etching. Then, a portion of the high dielectric amorphous film covered with the gate electrode formation film is left by wet etching using the gate electrode formation film 62 as a mask, and a portion of the exposed high dielectric amorphous film is removed. Amorphous silicon is reformed to polysilicon by performing heat treatment for the gate electrode formation film, thus forming a gate electrode 64. COPYRIGHT: (C)2006,JPO&NCIPI
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