发明名称 POWER-ON METHOD
摘要 <P>PROBLEM TO BE SOLVED: To realize fine pixels by a low breakdown voltage MOS process in a pixel circuit using an organic EL element and to provide a high definition display device. <P>SOLUTION: The organic EL element requires voltage between anode and cathode of about 4-6V for light emission, each element of the pixel circuit is usually considered as the breakdown voltage of 6V, however, source/drain breakdown voltage required by second and third transistors at the time of normal operation becomes about a half of anode power supply voltage. Then, sequences at the time of power application are optimized and the breakdown voltage of 6V of the second and third transistors is made unnecessary. At the time of power application, all of the first, second and third transistors are made into non-conduction, next, the first transistor is conducted, potential of a signal line is established as potential by which the third transistor becomes a conducted state, next, fixed potential connected to the third transistor is started, next, a bias power source Vb to be given to a gate of the second transistor is set to predetermined voltage by which the second transistor becomes a conducted state and a positive power source Vcc is finally started to the predetermined voltage. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006243175(A) 申请公布日期 2006.09.14
申请号 JP20050056311 申请日期 2005.03.01
申请人 SONY CORP 发明人 NAKAMURA KAZUO;UCHINO KATSUHIDE
分类号 G09G3/30;G09G3/20;H01L51/50 主分类号 G09G3/30
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