| 摘要 |
PROBLEM TO BE SOLVED: To eliminate the influence of an electronic degeneracy layer formed in a buffer layer, and to easily increase the resistance of a zinc oxide itself in a channel layer. SOLUTION: In a zinc oxide-based transistor 1, there are formed a zinc oxide-based channel layer 5, a gate insulating film layer 6, a gate electrode 9, a source electrode 7, and a drain electrode 8 on a substrate 2. A buffer layer 4 formed between the substrate 2 and the channel layer 5 is formed of high-resistance magnesium oxide zinc of which the magnesium composition is at least 10 atom%. The channel layer 5 is formed of a zinc oxide or magnesium oxide zinc having a small content of magnesium compositions as compared with the buffer layer 4. By the zinc oxide-based transistor, the influence of the electronic degeneracy layer formed in the buffer layer can be eliminated, an electronic device having satisfactory characteristics can be formed, the resistance of the zinc oxide itself in the channel layer is increased easily, and a threshold voltage of the transistor is controlled satisfactorily. COPYRIGHT: (C)2006,JPO&NCIPI
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