| 摘要 |
A p-channel MOS transistor includes first and second SiGe mixed crystal regions formed epitaxially to a silicon substrate at respective outer sides of sidewall insulation films of a gate electrode so as to fill respective trenches formed in source and drain diffusion regions of p-type respectively, wherein the p-channel MOS transistor further includes a compressive stressor film covering the silicon substrate and the sidewall insulation films continuously.
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