Photoresist undercoat-forming material and patterning process

摘要

A material comprising a specific bisphenol compound with a group of many carbon atoms is useful in forming a photoresist undercoat. The undercoat-forming material, optionally combined with an intermediate layer having an antireflective effect, has an absorptivity coefficient sufficient to provide an antireflective effect at a thickness of at least 200 nm and a high etching resistance as demonstrated by slow etching rates with CF₄/CHF₃ and Cl₂/BCl₃ gases for substrate processing.