METHOD AND DEVICE FOR PLASMA PROCESSING

摘要

PROBLEM TO BE SOLVED: To improve production yield by decreasing foreign materials which causes generation of defect without lowering operation rates of a semiconductor equipment when a semiconductor device is worked. SOLUTION: A mechanism for controlling an ion sheath 32w on an electrode 14 on which a wafer 2 is mounted and an ion sheath 32f on a member 141 mounted around it is provided. The thickness of the ion sheath 32f is made thinner than that of the ion sheath 32w. An inclination part 32s of the ion sheath is provided near the end part of the wafer 2. Ions 31 are made incident obliquely to the end part of the wafer, to remove a deposit film of the end part of the wafer. COPYRIGHT: (C)2006,JPO&NCIPI