| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a stencil mask blank for manufacturing a stencil mask with which transfer accuracy is prevented from being deteriorated because charges are accumulated in a warpage adjusting layer due to irradiation of an electron beam in exposure and the electron beam is deviated, and to provide the stencil mask, a manufacturing method thereof and a pattern exposure method of charged particle beam using the stencil mask. <P>SOLUTION: The stencil mask blank is provided with a supporting substrate consisting of a single crystalline silicon wafer, an active layer for providing the transfer pattern, an intermediate insulating layer formed between the supporting substrate and the active layer, and an amorphous silicon layer provided on the other side of the supporting substrate. In the stencil mask blank, openings corresponding to the transfer pattern are provided on the amorphous silicon layer, the supporting substrate and the intermediate insulating layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
