| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, in which the semiconductor device used for driving an electrothermal transducer is further improved in degree of integration, by reducing an occupied area on a chip that a switching element group having a superior withstand voltage characteristic occupies. SOLUTION: The method for manufacturing the semiconductor device has a process of forming n-type well regions 2 on one main surface of a p-type semiconductor substrate 1, a process of forming gate insulating films 203 on the n-type well regions 2, a process of forming gate electrodes 4 on the gate insulating films 203, a process of doping a p-type impurity by using the gate electrodes 4 as a mask, a process of forming p-type base regions 6 by diffusing the p-type impurity, and a process of forming n-type source regions 7 on the surface sides of the p-type base regions 6 by using the gate electrodes 4 as the mask, and n-type drain regions 8 and 9 to be offset from the gate electrodes 4 on the surface sides of the n-type well regions 2. COPYRIGHT: (C)2006,JPO&NCIPI
|
