| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To sustain the height of each bump at a constant level. <P>SOLUTION: The semiconductor device 100 comprises a post 11, a bump 13 formed on the post 11, and a portion 12 exhibiting poorer wettability to the bump 13 than the post 11 wherein the poor wettability portion 12 is formed between the post 11 and the bump 13. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
