| 摘要 |
PROBLEM TO BE SOLVED: To provide a composition for film formation that is capable of forming a silicone film having an appropriate uniform thickness suitable for use as an interlayer insulating film in a semiconductor device or the like and is capable of affording an insulating film excellent in dielectric properties and film strength. SOLUTION: The composition comprises a compound represented by general formula (I): X<SP>1</SP><SB>(3-m)</SB>R<SP>1</SP><SB>m</SB>SiR<SP>2</SP>SiR<SP>3</SP><SB>n</SB>X<SP>2</SP><SB>(3-n)</SB>and/or a hydrolyzate condensate thereof. In the formula, R<SP>1</SP>and R<SP>3</SP>are each a hydrogen atom or a monovalent substituent group; R<SP>2</SP>is a divalent group having an alicyclic structure; X<SP>1</SP>and X<SP>2</SP>are each a hydrolyzable group; and m and n are each an integer of 0-2. The insulating film is formed of the composition. COPYRIGHT: (C)2006,JPO&NCIPI
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