| 摘要 |
A semiconductor device includes a semiconductor substrate, a first interconnection layer formed above the semiconductor substrate via a first interlayer insulating film, the first interconnection layer having Cu as a main material, a second interconnection layer formed above the first interlayer insulating film and the first interconnection layer via a second interlayer insulating film, and a via plug formed through the second interlayer insulating film, the via plug electrically connecting between the first interconnection layer and the second interconnection layer, wherein a first material being different from Cu is selectively included at a grain boundary beneath the via plug among a plurality of grain boundaries of the first interconnection layer.
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