| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the size and to save the space by reducing the area of a conductor pattern incorporated in a dielectric substrate through utilization of the inductivity of a bonding wire for connecting a multiband high frequency semiconductor switching element with a dielectric substrate. <P>SOLUTION: On one major surface of a dielectric substrate, a high frequency switching circuit element IC for switching a high frequency signal path is mounted wherein a plurality of signal terminals are provided on the upper surface of the high frequency switching circuit element IC, a plurality of circuit terminals are provided on the major surface of the dielectric substrate 20, and an interconnection terminal TR is provided on the upper surface of the high frequency switching circuit element or on the major surface of the dielectric substrate. Any one signal terminal provided on the upper surface of the high frequency switching circuit element is connected with the interconnection terminal TR by a bonding wire W1, and the interconnection terminal TR is connected with the circuit terminal by a bonding wire W2. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
