发明名称 PLASMA TREATMENT DEVICE AND METHOD
摘要 PROBLEM TO BE SOLVED: To suppress increase in cost for manufacturing due to wearing of electrode periphery member when carrying out plasma treatment. SOLUTION: This plasma treatment device is provided with an electrode installed to a reaction chamber for placing a substrate 12 and an electrode periphery member 17, fitted surrounding the electrodes to making the electrode generate plasma to treat the substrate 12. The electrode periphery member 17 can be rotated along the substrate 12. As a result, the degree of consumption of the electrode periphery member 17 can be equalized, and a stable semiconductor apparatus can be manufactured, by avoiding abnormality of plasma and to reduce the cost for managing and maintaining the semiconductor manufacturing apparatus. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006245617(A) 申请公布日期 2006.09.14
申请号 JP20060164197 申请日期 2006.06.14
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 SAKAMOTO MASANORI;MATSUMOTO SEIJI;HISAKURE SHIYUNSUKE
分类号 H01L21/3065 主分类号 H01L21/3065
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