发明名称 Piezoelectric/electrostrictive film element
摘要 <p>A lower electrode (4) on a substrate (1) is continuously formed from one thick portion at the periphery to a thin diaphragm portion (3). An auxiliary electrode (8) is continuously formed from a position of the thin diaphragm portion independent of the lower electrode to the other thick portion (2) at the periphery. A piezoelectric/electrostrictive film (5) and an upper electrode (6) are formed over the lower electrode and auxiliary electrode. <??>Since an incompletely bonded portion (7B) that can cause variation and time-dependent changes is not structured to extend over the thin diaphragm portion (3) and the thick portions (2), it is possible to provide an element which has stable characteristics and which can be used under any condition. Further, since the incomplete bonded portion does not reside at ends of the thin diaphragm portion where the piezoelectric/electrostricitve film is likely to crack in the structure, it is possible to completely prevent the piezoelectric/electrostrictive film from cracking regardless of the type and characteristics of the film. <IMAGE> <IMAGE> <IMAGE></p>
申请公布号 EP1237204(B1) 申请公布日期 2006.09.13
申请号 EP20020251448 申请日期 2002.03.01
申请人 NGK INSULATORS, LTD. 发明人 YAMAGUCHI, HIROFUMI
分类号 H01L41/09;H01L41/047;H01L41/08;H01L41/187;H01L41/193 主分类号 H01L41/09
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