| 摘要 |
A random access memory array includes first random access memory elements arranged in a plurality of rows and columns for storing data words at a multiple memory locations. The memory array further includes second random access memory elements arranged in at least one additional column. Each second random access memory element is associated with a memory location to store a flag value indicative of whether the data word stored at that memory location is a true or complement version. The individual memory elements may comprise magnetic random access memory elements. Alternatively, the individual memory elements may comprise flash memory cells.
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