Negative resist composition comprising hydroxy-substituted base polymer and si-containing crosslinker having epoxy ring and a method for patterning semiconductor devices using the same

摘要

A negative resist composition and a method for patterning semiconductor devices using the composition are provided. The negative resist composition contains an alkali-soluble hydroxy-substituted base polymer, a silicon-containing crosslinker having an epoxy ring, and a photoacid generator. In the method for patterning semiconductor devices, fine patterns are formed according to a bi-layer resist process using the negative resist composition.