发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
The device has two connection electrodes separately arranged opposite to one another on an emitter electrode of an insulated gate bipolar transistor (1). Another two connection electrodes are arranged separately on an anode electrode of a diode. Electrode wiring parts come out from respective side sections of an extraction electrode (4), where the parts are electrically connected only with the respective connection electrodes. An independent claim is also included for a method for manufacturing a semiconductor device. |
申请公布号 |
KR20060096325(A) |
申请公布日期 |
2006.09.11 |
申请号 |
KR20060019867 |
申请日期 |
2006.03.02 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
TAKAHASHI HIDEKI |
分类号 |
H01L23/48;H01L25/04;H01L25/07;H01L25/18;H02M7/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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