发明名称 SOLID STATE IMAGING DEVICE AND ITS FABRICATION PROCESS
摘要 PROBLEM TO BE SOLVED: To suppress a black smear by preventing formation of a junction FET. SOLUTION: The process for fabricating a solid state imaging device including a photoelectric conversion element and a transistor formed contiguously thereto comprises a step for forming a first diffusion layer of reverse conductivity type on a substrate of one conductivity type in the region for forming the photoelectric conversion element and the transistor, a step for forming a second diffusion layer of one conductivity type on the first diffusion layer in the region for forming the photoelectric conversion element, a step for forming a third diffusion layer of one conductivity type continuously to the second diffusion layer on the first diffusion layer in the region for forming the transistor, a step for forming a protrusion by protruding the substrate at the position of opening of the gate electrode having an opening on the substrate above the third diffusion layer, a step for forming the gate electrode, a step for forming an insulating film on the gate electrode and the protrusion, a step for forming a contact hole in the insulating film, and a step for forming a source region in the vicinity of the substrate surface of the protrusion. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006237309(A) 申请公布日期 2006.09.07
申请号 JP20050050332 申请日期 2005.02.25
申请人 SEIKO EPSON CORP 发明人 NAKAMURA NORIMOTO
分类号 H01L27/146;H04N5/335;H04N5/359;H04N5/369;H04N5/374 主分类号 H01L27/146
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