| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of processing an element which can process an element while suppressing dielectric breakdown due to charge storage of an insulating film even if the element has the insulating film of a high dielectric constant. SOLUTION: An electric wiring for charge flow for electrically connecting a low-potential electric wiring having the same potential as a grounding potential to an insulating film in the vicinity of a processing region to be processed. Thus, when the insulating film is processed by using a focused ion beam, even if charges are generated in the insulating film, the charges are allowed to flow from the electric wiring for charge flow to the low-potential electric wiring having the same potential as the ground potential. COPYRIGHT: (C)2006,JPO&NCIPI
|
