| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a phase change memory element using a cell diode, and its manufacturing method. <P>SOLUTION: A phase change memory element comprises a semiconductor substrate of first conduction type, and a plurality of wordlines arranged on the semiconductor substrate. The wordline has a second conduction type different from the first conduction type, and a flat upper surface substantially. A first semiconductor pattern, which is arranged in single dimension along a longitudinal direction of the wordline, is offered on each upper surface of the wordline. The semiconductor pattern has the first conduction type or the second conduction type. A second semiconductor pattern having the first conduction type is laminated on the first semiconductor pattern. A gap region between the wordlines, that between the first semiconductor patterns, and that between the second semiconductor patterns are filled up with insulating film. A plurality of phase change substance patterns are arranged in two dimensions on the insulating film. The phase change substance pattern is electrically connected to the second semiconductor pattern, respectively. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
