| 发明名称 |
H20 PLASMA AND H20 VAPOR METHODS FOR RELEASING CHARGES |
| 摘要 |
An in-situ performed method utilizing a pure H<SUB>2</SUB>O plasma to remove a layer of resist from a substrate or wafer without substantially accumulating charges thereon. Also, in-situ performed methods utilizing a pure H<SUB>2</SUB>O plasma or a pure H<SUB>2</SUB>O vapor to release or remove charges from a surface or surfaces of a substrate or wafer that have accumulated during one or more IC fabrication processes.
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| 申请公布号 |
US2006199393(A1) |
申请公布日期 |
2006.09.07 |
| 申请号 |
US20060383931 |
申请日期 |
2006.05.17 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LEE YUAN-BANG;WU TZU-YANG;PAN SHENG-LIANG;LIN U. H.;LAI YU-CHIH;CHEN DE-FANG;LIN PEI-HSUAN;WU SHAN-HUA;LIU HUNG-HSIN |
| 分类号 |
H01L21/302;G03F7/42;H01L21/00;H01L21/26;H01L21/311;H01L21/324;H01L21/42;H01L21/461;H01L21/477 |
主分类号 |
H01L21/302 |
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