| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device including a semiconductor element provided with both an LDD region and a GOLD region without the need for increasing the number of processing steps and to provide a manufacturing method thereof. SOLUTION: A first impurity region 4ad acting line a source region and a second impurity region 4ae acting like a drain region are formed through ion implantation by using a resist pattern for forming a gate electrode of a transistor as a mask, and the gate electrode 9 including lower electrodes 6a, 8a and an upper electrode 7a is formed by using the resist pattern for a mask. Then a fifth impurity region and a sixth impurity region acting like the GOLD region and a third impurity region and a fourth impurity region acting like the LDD region are formed through ion implantation by using the gate electrode 9 for a mask. COPYRIGHT: (C)2006,JPO&NCIPI
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