| 摘要 |
An MIM capacitor includes a substrate, a capacitor part having a structure in which a bottom electrode, a dielectric layer and a top electrode are laminated in order, and a ground shield layer formed between the bottom electrode of the capacitor part and the substrate and connected to a predetermined ground terminal. The ground shield layer may be formed of metal or polysilicon, or a layer doped with impurities having a valence of three or five. Also, the ground shield layer has a predetermined patterned structure. Thus, it is possible to minimize power loss due to the substrate.
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