发明名称 |
DUAL-BIT NON-VOLATILE MEMORY CELL AND METHOD OF MAKING THE SAME |
摘要 |
A non-volatile memory cell having a local silicon nitride layer to control dispersion of hot electrons is disclosed. The dual-bit non-volatile memory cell has a stack of layers including silicon on the surface of a substrate. The stack of layers has at least one first oxide silicon layer and a silicon nitride layer overlying the first oxide silicon layer. An opening is formed in the stack of layers and a gate oxide layer is deposited on the surface of the substrate within the opening. A control gate is formed on the gate oxide layer followed by a second oxide silicon layer overlying the surfaces of the control gate and the stack of layers. A second polysilicon layer is formed overlying the gate oxide layer. Dual split-gates are then formed on the second polysilicon layer.
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申请公布号 |
US2006199356(A1) |
申请公布日期 |
2006.09.07 |
申请号 |
US20060306737 |
申请日期 |
2006.01.09 |
申请人 |
SHIH PING-CHIA;HSIEH SHOU-WEI |
发明人 |
SHIH PING-CHIA;HSIEH SHOU-WEI |
分类号 |
H01L29/94;H01L21/326 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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