| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a ferroelectric memory and its circuit, a readable/writable non-volatile circuit which does not require a specific control system or procedures in reading or writing data, can be handled in the same way as a usual insulating gate field effect type transistor circuit, and has a small occupied area and is suitable to be easily built in an integrated circuit. <P>SOLUTION: This circuit has a configuration of a combination of a ferroelectric capacitor having a ferroelectric thin film and a latch circuit in which two inverter circuits each consisting of an MOSFET cross. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
