| 摘要 |
A method for forming a silicon-containing film on a surface of a substrate is described. In the method, a cyclopentasilane solution is filled in a cell to permit an inner wall surface of the cell and the cyclopentasilane solution to be in contact with each other. Subsequently, UV light is irradiated from a spot UV irradiator to cause the light to be irradiated on the cyclopentasilane solution in the vicinity of a region of an inner wall surface through a wall of the cell, thereby forming a silicon-containing film at the region. Thus, silicon-containing the film is formed without resorting to a thermal treatment by a reduced number of steps.
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