Non-dispersive high density polysilicon capacitor utilizing amorphous silicon electrodes

摘要

The present invention provides, in one aspect, a method of fabricating a capacitor 615, comprising forming a first electrode 610, placing a dielectric 515 over the first electrode, and locating a second electrode 510 over the dielectric wherein at least one of the first or second electrodes 610, 510 is doped amorphous silicon.