发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a technique capable of fabricating a semiconductor device with requested characteristics in high yield at low cost without making processes and devices complex. <P>SOLUTION: The semiconductor has a thin film circuit provided on a substrate, and a conductive layer which is electrically connected to the thin film circuit and provided continuously on the substrate and thin film circuit. As an embodiment of a method for manufacturing the semiconductor device, the thin film circuit is installed on the substrate, and a composition containing a conductive material having flowability is stuck on the substrate and thin film circuit to form the conductive layer electrically connected to the thin film circuit. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006237402(A) 申请公布日期 2006.09.07
申请号 JP20050051883 申请日期 2005.02.25
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 ITO KYOSUKE
分类号 H01L27/12;H01L21/02;H01L21/336;H01L27/10;H01L27/105;H01L29/786;H01L51/05 主分类号 H01L27/12
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