| 发明名称 |
FERROMAGNETIC CONDUCTOR MATERIAL, ITS MANUFACTURING METHOD, MAGNETORESISTIVE ELEMENT AND FIELD EFFECT TRANSISTOR |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a ferromagnetic conductor material from which a tunnel magnetoresistive element and an element of a field effect transistor can easily be manufactured by combining them with the other material, for example. <P>SOLUTION: The ferromagnetic conductor material is shown by a chemical formula (1) M(<SB>A-x</SB>)M'<SB>x</SB>O<SB>y</SB>((x) is a numerical value in a range of 0<x≤0.8 and x<A, A and (y) are constants changing in accordance with a type of M, M' is at least Mn or Zn when M is Fe, M' is at least Mn or Zn when M is Cr, M' is at least Mn or Zn when M is Ti, and M' is Mn when M is Zn). <P>COPYRIGHT: (C)2006,JPO&NCIPI |
| 申请公布号 |
JP2006237304(A) |
申请公布日期 |
2006.09.07 |
| 申请号 |
JP20050050216 |
申请日期 |
2005.02.25 |
| 申请人 |
OSAKA INDUSTRIAL PROMOTION ORGANIZATION;OSAKA UNIV |
发明人 |
TANAKA HIDEKAZU;ISHIKAWA MIZUE;KAWAI TOMOJI |
| 分类号 |
H01F1/40;H01F1/34;H01F10/193;H01F10/20;H01L21/8246;H01L27/105;H01L29/78;H01L29/786;H01L29/82;H01L43/08 |
主分类号 |
H01F1/40 |
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