发明名称 |
Semiconductor device and fabrication method thereof |
摘要 |
A semiconductor device includes a first nitride semiconductor layer formed on a substrate and a second nitride semiconductor layer formed on the first nitride semiconductor layer so as to be in contact with the first nitride semiconductor layer. The first nitride semiconductor layer contains a p-type impurity. The second nitride semiconductor layer contains an n-type impurity and a p-type impurity. In the second nitride semiconductor layer, the concentration of the n-type impurity is higher than the concentration of the p-type impurity.
|
申请公布号 |
US2006197104(A1) |
申请公布日期 |
2006.09.07 |
申请号 |
US20060363944 |
申请日期 |
2006.03.01 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
TAMURA SATOSHI;IKEDO NORIO |
分类号 |
H01L21/00;H01L33/02;H01L33/32 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|