| 摘要 |
PROBLEM TO BE SOLVED: To provide a charge-pump type booster circuit that makes it possible to adjust an output voltage and that can reduce effect by dispersion in manufacturing processes. SOLUTION: An NMOS transistor M1 that inputs a drive pulseΦ1 and two NMOS transistors M2, M3, the gates and drains of which are connected in common, are connected in series between the positive pole side of VDD and Vout with the gates and drains connected to the VDD side in such a way that the direction to Vout becomes the forward direction. The drive pulsesΦ1,Φ2 of the reversed phase to each other are each supplied to the source-side output ends N1, N2 of the first and the second step NMOS transistors M1. M2 via amplifying capacitors C1, C2. Furthermore, another capacitor C3 for adjusting the output voltage to GND (a reference voltage) is connected to the source-side output end N1 of the first step NMOS transistor M1. COPYRIGHT: (C)2006,JPO&NCIPI
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