| 摘要 |
PROBLEM TO BE SOLVED: To provide a Schottky diode in which a Schottky barrier in a reverse directional bias is high and the Schottky barrier in a forward directional bias is low. SOLUTION: An n- type layer 3 composed of 3C-SiC having a band gap smaller than that of an n- type epitaxial layer 2 is provided on an upper face of the n- type epitaxial layer 2 composed of 4H-SiC or 6H-SiC, also a trench part 4 passing the n- type layer 3 and reaching the n- type epitaxial layer 2 is provided, and an Al film 5 is brought in Schottky contact with the n- type layer 3 and the n- type epitaxial layer 2. With such a structure, at reverse bias, the contact part of the n- type layer 2 with the Al film 5 in a mesa part is pinched off by a depletion layer which extends to the n- type epitaxial layer 2, and at reverse bias, the potential barrier in the mesa part is made higher. Thus, in a reverse directed bias, the potential barrier can be made high in the n- type epitaxial layer 2, and in a forward directed bias, the potential barrier can be lowered in the n- type layer 3. Then, it is possible to realize reduction in the consumption power of a Schottky diode. |
